Mathematics, 27.08.2020 04:01 alyssatamayo641

A silicon diode in an adapter rectifying circuit has a carrier density of 10-21in p material and 1022m-3 in n material, the temperature of the charger changes from 25°C
to 40°C, find the change in barrier potential of the diode.

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A silicon diode in an adapter rectifying circuit has a carrier density of 10-21in p material and 1022m-3 in n material, the temperature of the charger changes from 25°Cto 40°C, find the change in barrier potential of the diode.

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Another question on Mathematics

A silicon diode in an adapter rectifying circuit has a carrier density of 10-21in p material and 1022m-3 in n material, the temperature of the charger changes from 25°C
to 40°C, find the change in barrier potential of the diode.