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Silica, sio2, is formed on silicon as an electrically insulating layer for microelectronic devices. silica is formed when silicon is exposed to o2 gas at an elevated temperature. at 900Ëšc, it takes 90 minutes for the oxygen to diffuse from the surface to form a 0.06 micron (0.06 x 10-6 m) thick layer of sio2 on
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Chemistry, 22.06.2019 04:30
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Chemistry, 22.06.2019 05:20
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Chemistry, 22.06.2019 12:10
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