As a part of producing MOSFET transistors, a p-type silicon (Si) wafer containing boron (B) dopants at a concentration of 1x1019 atoms/cm3 is being processed to create a PN junction by doping the wafer with phosphorous (P) atoms using a P-producing gas. Assume that the wafer does not contain P prior to the diffusion process. The solubility of P in Si at 1000°C is 1x1020 atoms/cm3. It is determined that the PN junction depth of 1 um was produced after 60 minutes at 1000°C. The activation energy for estimating the diffusion coefficient of P in Si is 2.5x105 J/mole. Based on this result, estimate the pre-exponential constant for the diffusion coefficient of P in Si at 1000°C in cm2/s.

1. how much energy is needed to raise the temperature of 40.0 g of argon from 25c to 40c? the specific heat capacity of argon is 0.520 j/(g·k) 2a. 23.0 ml of 0.100 m hcl (standard) are added from a buret to neutralize 50.0 ml of an unknown basic solution. 2b. if the oh- produced in the previous reaction came from ca(oh)2, then what is the molarity of the ca(oh)2? 3.calculate the new freezing-point of a solution when 60.5 grams of cacl2 solute is dissolved in 0.612 kg of water. 4. what is the maximum number of moles of alcl3 that can be produced from 5.0 mol al and 6.0 mol cl2? 5. a sample of oxygen gas has a volume of 150 ml when its pressure is 0.923 atm. if the pressure is increased to 0.987 atm and the temperature remains constant, what will the new volume be? 6. nitrogen gas in a closed container at a temperature of 100.0 oc and 3.0 atm is heated to 300 oc. what is the pressure of the gas at the higher temperature?

What part of the ear is names after tools, such as the hammer and the anvil?

An object in mechanical equilibrium is an object