Physics, 30.11.2019 07:31 samehajamal1234567
Now you are given the additional information that the subthreshold swing of this transistor technology at room temperature is s=78 mv/dec. at a bias of vgs=3 v and vds=3 v, estimate the backgate transconductance gm of a wg=10 µm device.
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Now you are given the additional information that the subthreshold swing of this transistor technolo...
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