3. consider an mos capacitor with n+ polysilicon gate and n-type silicon substrate. assume nd=1016cm-3 and let ef-ec=0.2 ev in the n+ polysilicon. assume the oxide has a thickness of tox= 300å. also assume that (polysilicon)=(crystal silicon). (a) calculate the metal-semiconductor work function difference. (b) calculate the threshold voltage for the ideal case of zero fixed oxide charge and zero interface states

8 meters above the spring

i think if it were me i whould divide 300 dide 15

step-by-step explanation:

the minimum amperage that the current in this wire would have to have so that its weight is completely supported by the magnetic force due to earth's field, assuming that no other forces except gravity act on it

electromagnetic shielding is the practice of reducing the electromagnetic field in a space by blocking the field with barriers made of conductive or magnetic materials. shielding is typically applied to enclosures to isolate electrical devices from their surroundings, and to cables to isolate wires from the environment through which the cable runs. electromagnetic shielding that blocks radio frequency electromagnetic radiation is also known as rf shielding.

the shielding can reduce the coupling of radio waves, electromagnetic fields and electrostatic fields. a conductive enclosure used to block electrostatic fields is also known as a faraday cage. the amount of reduction depends very much upon the material used, its thickness, the size of the shielded volume and the frequency of the fields of interest and the size, shape and orientation of apertures in a shield to an incident electromagnetic

from wikipedia