For a particular semiconductor, eg = 1.50 ev, m p* = 10 mn* , t = 300 k, and ni = 1 x 105 cm^-3.
(a) determine the position of the intrinsic fermi energy level with respect to the center of the bandgap.
(b) impurity atoms are added so that the fermi energy level is 0.45 ev below the center of the bandgap.
(i) are acceptor or donor atoms added?
(ii) what is the concentration of impurity atoms added
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For a particular semiconductor, eg = 1.50 ev, m p* = 10 mn* , t = 300 k, and ni = 1 x 105 cm^-3.
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