Asilicon npn bipolar transistor has the following specifications: emitter: n+: no -1018 cm3, base: p-type, na-1015 cm3 collector: n-type, no-5x1015 cm3. 1. draw the energy band diagram of the transistor at thermal equilibrium, if the transistor is biased at normal active mode, emitter-base junction forward biased with 1 v, and collector-base junction is reverse biased with 4v, draw the energy band diagram 2.