For a p-type silicon with boron acceptor density NA​=1×1016 cm−3,Calculate the temperature at which only half of the acceptors are ionized. The ionization energy of born acceptor in silicon is 0.045 eV. Assume the bandgap is independent of temperature.

When using the ohmmeter function of a digital multimeter, the leads are placed in what position relative to the component being tested? a. parallel b. control c. series d. line

Air is to be cooled in the evaporator section of a refrigerator by passing it over a bank of 0.8-cm-outer-diameter and 0.4-m-long tubes inside which the refrigerant is evaporating at -20°c. air approaches the tube bank in the normal direction at 0°c and 1 atm with a mean velocity of 4 m/s. the tubes are arranged in-line with longitudinal and transverse pitches of sl- st 1.5 cm. there are 30 rows in the flow direction with 15 tubes in each row. determine (a) the refrigeration capacity of this system and (b) pressure drop across the tube bank. evaluate the air properties at an assumed mean temperature of -5°c and 1 atm. is this a good assumption?

The filament of an incandescent lamp has a temperature of 2000k. calculate the fraction of radiation emitted in the visible light band if the filament is approximated as blackbody