A Si step junction maintained at room temperature under equilibrium conditions has a p-side doping of Na = 2x1015/cm3 , and an n-side doping of Nd = 1015/cm3 . Compute
(a) Built-in potential Vbi
(b) Depletion region width W, and xp, xn
(c) Maximum electric field at x=0
(d) Electrostatic potential V at x=0
(e) Make sketches of the charge density, electric field, and electrostatic potential as a function of position x

Asingle-geared blanking press has a stroke of 200 mm and a rated capacity of 320 kn. a cam driven ram is assumed to be capable of delivering the full press load at constant force during the last 15 percent of a constant-velocity stroke. the camshaft has an average speed of 90 rev/min and is geared to the flywheel shaft at a 6: 1 ratio. the total work done is to include an allowance of 16 percent for friction a) estimate the maximum energy fluctuation b) find the rim weight for an effective diameter of 1.2 m and a coefficient of speed fluctuation of 0.10

Draw the engineering stress-strain curve for (a) bcc; (b) fcc metals and mark important points.

The higher the astm grain size number, the finer the gran is. a)-true b)-false