MOSFET has the gate length L = 0.6 um, the width W = 10 um, the oxide thickness 4.5 nm and the relative dielectric permittivity 3.9. The electron mobility is 365 cm^2/Vs, the gate-threshold voltage offset V_GT = 3.3 V and the characteristic velocity saturation field Fs = 1.4 e4 V/cm.

a. For the drain voltage corresponding to the onset of saturation, find the channel sheet carrier density ns_dr at the drain end of the channel.

b. Find the saturation current, Isat

Asingle-geared blanking press has a stroke of 200 mm and a rated capacity of 320 kn. a cam driven ram is assumed to be capable of delivering the full press load at constant force during the last 15 percent of a constant-velocity stroke. the camshaft has an average speed of 90 rev/min and is geared to the flywheel shaft at a 6: 1 ratio. the total work done is to include an allowance of 16 percent for friction a) estimate the maximum energy fluctuation b) find the rim weight for an effective diameter of 1.2 m and a coefficient of speed fluctuation of 0.10