An npn silicon transistor is biased in the inverse-active mode with VBE 3 V and VBC 0.6 V. The doping concentrations are NE 1018 cm3 , NB 1017 cm3 , and NC 1016 cm3 . Other parameters are xB 1 m, E0 B0 C0 2 107 s, DE 10 cm2 /s, DB 20 cm2 /s, DC 15 cm2 /s, and A 103 cm2 . (a) Calculate and plot the minority carrier distribution in the device. (b) Calculate the collector and emitter currents. (Neglect geometry factors and assume the recombination factor is unity.)

the equation above shows how temperature f, measured in degrees fahrenheit, relates to a temperature c, measured in degrees celsius. based on the equation, which of the following must be true?

a temperature increase of 1 degree fahrenheit is equivalent to a temperature increase of

5

9

degree celsius.

a temperature increase of 1 degree celsius is equivalent to a temperature increase of 1.8 degrees fahrenheit.

a temperature increase of

5

9

degree fahrenheit is equivalent to a temperature increase of 1 degree celsius.

a) i only

b) ii only

c) iii only

d) i and ii only

answer:

i ryan lol

i do not know

Explanation: