The seed crystal used for czochralski crystal growth is necked down to about 3 mm diameter to produce a dislocation-free crystal. use 2 x 10^6 g/cm2 as the yield strength of silicon at the growth temperature (the units are strange but correct assuming the gravitational constant of earth, etc.) and determine the maximum length of each ingot that can be supported by this neck if the ingots are 150, 200 and 300 mm diameter.
for the 200 mm diameter case, how many wafers can be produced (if the final wafer thickness is 725 mm).

Amass of m 1.5 kg of steam is contained in a closed rigid container. initially the pressure and temperature of the steam are: p 1.5 mpa and t 240°c (superheated state), respectively. then the temperature drops to t2= 100°c as the result of heat transfer to the surroundings. determine: a) quality of the steam at the end of the process, b) heat transfer with the surroundings. for: p1.5 mpa and t 240°c: enthalpy of superheated vapour is 2900 kj/kg, specific volume of superheated vapour is 0. 1483 m/kg, while for t 100°c: enthalpy of saturated liquid water is 419kj/kg, specific volume of saturated liquid water is 0.001043m/kg, enthalpy of saturated vapour is 2676 kj/kg, specific volume of saturated vapour is 1.672 m/kg and pressure is 0.1 mpa.

When using the ohmmeter function of a digital multimeter, the leads are placed in what position relative to the component being tested? a. parallel b. control c. series d. line

If a particle moves along a path such that r : (3 sin t) m and ? : 2t rad, where t is in seconds. what is the particle's acceleration in m/s in 4 seconds? a)- 16.43 b)- 16.29 c)- 15.21 d)- 13.79