For an n-channel mosfet with gate oxide (sio2) thickness of 30 nm, threshold voltage of 0.7 v, z = 30 um, and length of the device is 0.9 μm, calculate the drain current for vg-3 v and vd-0.2 v. assume that the electron channel mobility is 200 cm'/v-sec. what will be the required drain current to drive the mos in saturation region? how the drain current will change if hfo2 with ks 25 will be used as a gate oxide, whereas other mosfet parameters will be kept the same. what did you mention?

Apump is used to circulate hot water in a home heating system. water enters the well-insulated pump operating at steady state at a rate of 0.42 gal/min. the inlet pressure and temperature are 14.7 lbf/in.2, and 180°f, respectively; at the exit the pressure is 60 lbf/in.2 the pump requires 1/15 hp of power input. water can be modeled as an incompressible substance with constant density of 60.58 lb/ft3 and constant specific heat of 1 btu/lb or. neglecting kinetic and potential energy effects, determine the temperature change, in °r, as the water flows through the pump.

A-mn has a cubic structure with a0 0.8931 nm and a density of 7.47 g/cm3. b-mn has a different cubic structure, with a0 0.6326 nm and a density of 7.26 g/cm3. the atomic weight of manganese is 54.938 g/mol and the atomic radius is 0.112 nm. determine the percent volume change that would occur if a-mn transforms to b-mn.

Compute the pressure drop of 30°c air flowing with a mean velocity of 8 m/s in a circular sheet-metal duct 300 mm in diameter and 15 m long. use a friction factor, f 0.02, and pair = 1.1644 kg/m a. 37.26 pa b. 25.27 pa n c. 29.34 pa d. 30.52 pa