subject
Engineering, 02.12.2019 22:31 MyLove7817

For a si/si1-xgex /si hetero-junction bipolar transistor, x=0.1 in the base region and x=0 in the emitter and collector regions. bandgap of the base region is 12% smaller than that of si. if the base current is due to emitter injection efficiency only, calculate improvement in the common emitter current gain at 10 oc over 120 o c.

ansver
Answers: 1

Another question on Engineering

question
Engineering, 03.07.2019 15:10
Ahouse has the following electrical appliance usage (1) single 40w lamp used for 4 hours per day (2) single 60w fan used for 12 hours per day (3) single 200w refrigerator that runs 24 hours per day with compressor run 12 hours and off 12 hours find the solar power inverter size in watt with correction factor of 1.25.
Answers: 1
question
Engineering, 04.07.2019 18:10
For the closed feedwater heater below, feedwater enters state 3 at a pressure of 2000 psia and temperature of 420 °f at a rate of ix10 ibhr. the feedwat extracted steam enters state 1 at a pressure of 1000 psia and enthalpy of 1500 btu/lbm. the extracted er leaves at an enthalpy of 528.7 btu/lbm steam leaves as a saturated liquid. (16) a) determine the mass flow rate of the extraction steam used to heat the feedwater (10) b) determine the terminal temperature difference of the closed feedwater heater
Answers: 3
question
Engineering, 04.07.2019 18:20
Wiy doeres rere okhn a pump whon working betwon the same pressure range?
Answers: 2
question
Engineering, 04.07.2019 19:10
The proportional limit is always greater than the yield strength for a material. a)-trune b)- false
Answers: 3
You know the right answer?
For a si/si1-xgex /si hetero-junction bipolar transistor, x=0.1 in the base region and x=0 in the em...
Questions
question
Mathematics, 24.05.2021 17:50
question
Mathematics, 24.05.2021 17:50
question
Biology, 24.05.2021 17:50
Questions on the website: 13722363