Engineering, 23.11.2019 02:31 lizdeleon248
In a p + − njunction, the n side has a donor concentration of 1 × 1016 cm−3 . if ni = 1 × 1010 cm−3 , the relative dielectric constant pr = 12, dn = 50 cm2/s, dp = 20 cm2/s, and the electron and hole minority carriers have lifetimes of τ = 100 ns and 50 ns respectively, and a forward bias of 0.6 v, calculate the hole diffusion current density 2µm away from the depletion edge on the n-side. if we double the p + doping, what effect will it have on the hole diffusion current?
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In a p + − njunction, the n side has a donor concentration of 1 × 1016 cm−3 . if ni = 1 × 1010 cm−3...
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