Consider photoconductive sensor element with absorbing area 0.1 cm², thickness 50 um and distance between current contacts 0.2 mm. the element has quantum efficiency equal to 50%. the sensor is illuminated with 1 u w of laser light (a = 600 nm). assume that photo excited charge carriers have mobility of 100 cm/v-s and lifetime of 1 ms. find the volume concentration of the photo excited carriers and corresponding photoconductivity. what would be the photoconductive gain and current responsivity at 650 nm if the sensor operates under 3 v bias.