In Lab Experiments:
1. Breadboard the MOSFET biasing circuit with two power supplies of Fig. 1.
2. Measure the lp-Vos and Id-Vos characteristics of the 2N7000 MOSFET for 0 Voss
2.5 V and 0 sVps s 10 V, using the test circuit shown in Fig. 1(b). Enter the collected
data in the data table.
3. Build and test the circuit for biasing the MOSFET designed in Prelab. 10 (Fig. 2).
Measure Vs, VG, Vp, Vas, Vps, Vdo, and Id. Adjust the component values so that the
given specifications are met.
Postlab: Submit a written report.
1. Plot Ip-Vos and ID-Vos characteristics of the 2N7000 MOSFET with Matlab and
determine go and r, at Ip = 4 mA from the slope of the measured characteristics.