What are the series of steps that form oxygen atoms?

2.5.2 Atomistic Configurations of Oxygen in Silicon Crystals

Oxygen atoms are incorporated in the silicon lattice on an interstitial position (denoted by Oi), where the oxygen atom sits in an almost bond-centered position between two adjacent Si atoms [101]. Several of the local vibration modes are infrared (IR) active. The predominant IR line at 1104/cm (at room temperature) was calibrated with respect to other analytical methods, such as gas fusion and several radioactive techniques, and is used as the standard method for the quantitative determination of the oxygen content in as-grown silicon crystals (as-grown silicon usually contains only a negligible amount of precipitated oxygen).

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