Consider a homogeneous gallium arsenide semiconductor at T 300 K with Nd 1016 cm3 and Na 0. (a) Calculate the thermal-equilibrium values of electron and hole concentrations. (b) For an applied E-fi eld of 10 V/cm, calculate the drift current density. (c) Repeat parts (a) and (b) if Nd 0 and Na 1016 cm3 .

a) The electron carrier concentration is

   The hole carrier concentration is

b) The drift current density is given as

c) Repeated part a the electron carrier concentration is

  Repeated part a the holes carrier concentration is

  Repeated part b the electron density is

Explanation:

The explanation is shown on the first , second ,third and fourth image

the answer to your question is c.

if you read the house of usher you should know that the house was haunted

the answers would be

the first one and the second one