Amos device requires a gate oxide of 10 ± 0.5 nm. assume the growth is done at 900˚c in dry o2. neglect any effect of the anomalous initial growth. derive a simple expression, which gives the sensitivity of the oxide thickness tox to growth temperature t, i. e. dtox/dt. evaluate this expression to see how well controlled the furnace temperature must be in order to obtain 10 nm ± 0.5 nm at 900˚c.