Estimate the alloy fraction, x, of indium to gallium in inxga1-xas, to produce a 1% compressive strain in an inxga1-xas epilayer on a gaas substrate. assume that the lattice constant for gaas and inas are 5.65a and 6.05a, respectively. identify what limitations apply to the growth of thick strained epitaxial layers.
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Estimate the alloy fraction, x, of indium to gallium in inxga1-xas, to produce a 1% compressive stra...
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