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3,7-dibromo-4,6-dichloro oct-5-ene-1,2-diol. show its structure by photo.
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Silica, sio2, is formed on silicon as an electrically insulating layer for microelectronic devices. silica is formed when silicon is exposed to o2 gas at an elevated temperature. at 900˚c, it takes 90 minutes for the oxygen to diffuse from the surface to form a 0.06 micron (0.06 x 10-6 m) thick layer of sio2 on
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An electrons position cannot be known precisely only it's probability of being in a certain location can be known
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Apush or pull that moves or changes and object when to objects touch
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3,7-dibromo-4,6-dichloro oct-5-ene-1,2-diol. show its structure by photo....
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